 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VISHAY ILD3/ ILQ3 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Features * Current Transfer Ratio at IF = 1.6 mA * Double Molded Package Offers Isolation Test Voltage 5300 VRMS, 1.0 sec. Dual Channel A1 C2 C3 A 4 8E 7C 6C 5E Agency Approvals * * * * UL - File No. E52744 System Code H or J CSA 93751 BSI IEC60950 IEC60965 FIMKO Quad Channel A1 C C A A C C A 2 3 4 5 6 7 8 16 E 15 C 14 C 13 E 12 E 11 C 10 C 9E Description The ILD3/ ILQ3 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistors. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD3/ ILQ3 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CTR modulation. The ILD3 has two isolated channels in a single DIP package and the ILQ3 has four isolated channels per package. i179012 Order Information Part ILD3 ILQ3 Remarks CTR > 500 %, Dual Channel DIP-8 CTR > 500 %, Quad Channel DIP-16 For additional information on the available options refer to Option Information. Document Number 83655 Rev. 1.3, 19-Apr-04 www.vishay.com 1 ILD3/ ILQ3 Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse current Forward continuous current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.3 Unit V mA A mW mW/C Output Parameter Collector-emitter breakdown voltage Collector current t < 1.0 ms Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO IC IC Pdiss Value 50 50 400 200 2.6 Unit V mA mA mW mW/C Coupler Parameter Test condition Symbol VISO Value 5300 Unit VRMS Isolation test voltage (between t = 1 sec. emitter and detector, refer to standard climate 23C/50% RH, DIN50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Power dissipation Derate linearly from 25 C Storage temperature range Operating temperature range Junction temperature Soldering temperature 2.0 mm case bottom Tstg Tamb Tj Tsld RIO RIO Ptot 7 7 1012 10 11 mm mm mW mW/C C C C C 250 3.3 - 40 to + 150 - 40 to + 100 100 260 www.vishay.com 2 Document Number 83655 Rev. 1.3, 19-Apr-04 VISHAY Electrical Characteristics ILD3/ ILQ3 Vishay Semiconductors Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Thermal resistance, junction to lead Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Rthjl Symbol VF IR Min Typ. 1.25 0.01 25 750 Max 1.65 10 Unit V A pF K/W Output Parameter Collector-emitter leakage current Collector-emitter capacitance Thermal resistance, junction to lead Test condition VCE = 15 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE Rthjl Min Typ. 5.0 6.8 500 Max 70 Unit nA pF K/W Coupler Parameter Capacitance (input-output) Test condition VIO = 0 V, f = 1.0 MHz Symbol CIO Min Typ. 0.8 Max Unit pF Current Transfer Ratio Parameter Saturated Current Transfer Ratio (ILD/Q3-1) Saturated Current Transfer Ratio (ILD/Q3-2) Test condition IF = 1.6 mA, VCE = 0.4 V IF = 1.0 mA, VCE = 0.4 V Part ILD3 ILD3 Symbol CTRsat CTRsat Min 300 100 Typ. Max Unit % % Common Mode Transient Immunity Parameter Common mode rejection output high Common mode rejection output low Common mode coupling capacitance Test condition VCM = 50 VP-P, RL = 10 K, IF = 0 mA VCM = 50 VP-P, RL = 10 K IF = 0 mA Symbol CMH CML CCM Min Typ. 5000 5000 0.01 Max Unit V/s V/s pF Document Number 83655 Rev. 1.3, 19-Apr-04 www.vishay.com 3 ILD3/ ILQ3 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A VISHAY 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 10 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) i178007 .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) www.vishay.com 4 Document Number 83655 Rev. 1.3, 19-Apr-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. ILD3/ ILQ3 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83655 Rev. 1.3, 19-Apr-04 www.vishay.com 5 |
Price & Availability of ILQ3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |